航空材料学报2019，Vol.39Issue(2)：55-60,6.
（100）/（111）面金刚石膜抗氧等离子刻蚀能力
Resistance abilities of （100）/（111）-faceted diamond films against oxygen plasma etching
孙祁 1汪建华 1程翀 2陈祥磊 2吴荣俊 2刘单 2祝娇2
作者信息
- 1. 武汉工程大学 材料科学与工程学院，武汉 430070
- 2. 武汉第二船舶设计研究所，武汉 430064
- 折叠
摘要
Abstract
The resistance abilities of (100) and (111)-faceted diamond films against oxygen plasma, 100 μm as film thickness, were investigated by the microwave power chemical vapor deposition (MPCVD) technique. The results indicate that the preferred etching points of the (100)-faceted diamond films are located at the grain boundaries and the preferred etching points of the (111)-faceted diamond films are located at the crystal surfaces. After 30 minutes etching, the (100)-faceted crystal can still be obviously shown while the (111)-faceted crystal is unobvious. After 60 minutes etching, the preferential orientations of (100)-faceted and(111)-faceted diamond films both are disappeared. The FWHM value of the (100)-faceted diamond films is increased from 8.51 cm–1 to 12.48 cm–1 and the FWHM value of the(111)-faceted diamond films is increased from 8.74 cm–1 to 148.49 cm–1 when the etching time is 60 minutes. The etching rate of the (100)-faceted diamond film is 0.35 μm/min when the etching time is 40 minutes and it is increased to 1.34 μm/min when the etching time is 60 minutes. At early stage, the (100)-faceted diamond film presented better resistance ability than the (111)-faceted diamond film against the oxygen plasma etching. But the resistance abilities to the plasma etching of the (100) and the (111)-faceted diamond films are similar when the etching time is 60 minutes.关键词
金刚石膜/ （100）晶面/ （111）晶面/ 氧等离子体/ 刻蚀/ Key words
diamond films/ (100)-faceted/ (111)-faceted/ oxygen plasma/ etching/ 分类
数理科学引用本文复制引用
孙祁,汪建华,程翀,陈祥磊,吴荣俊,刘单,祝娇..（100）/（111）面金刚石膜抗氧等离子刻蚀能力[J].航空材料学报,2019,39(2):55-60,6.
