红外与毫米波学报2019，Vol.38Issue(3)：269-274,289,7.DOI:10.11972/j.issn.1001-9014.2019.03.002
基于石墨烯/铟砷量子点/砷化镓异质结新型光电探测器
A novel photodetector based on Graphene/InAs quantum dots/GaAs hetero-junction
摘要
Abstract
Due to the ultra-high electron mobility,graphene has been proposed as a prospective candidate for the photodetection.Nevertheless the relatively low photo absorption limits its potential application.On the other hand,the semiconductor quantum dots has exhibited high quantum efficiency and strong optical absorption.A novel*photodetector by the incorporation of graphene with InAs quantum dots on GaAs substrate has been proposed.The performance of the fabricated photodetector,such like photoresponse,dark current,and time response,have been extensively studied.The photodetector based on graphene/InAs QDs/GaAs hybrid hetero-junction demonstrated that for the visible range of 637 nm a responsivity of about 17.0 mA/W,and detectivity of 2.3 × 1010 cmHz1/2 W-1,with an on/off ratio of about 1 × 103 could be achieved.For the near infrared range of 940 nm,an even higher responsivity of of 207 mA/W has been obtained.Moreover a stronger dependence of dark current,Schottky barrier height and ideality factor on temperature has also been observed.关键词
石墨烯/砷化镓/量子点/异质结构/肖特基结Key words
Graphene/GaAs/quantum dots (QDs)/heterostructure/Schottky junction分类
信息技术与安全科学引用本文复制引用
胡之厅,陈刚,甘桃,杜磊,张家振,徐煌,韩赛垒,徐鹤靓,刘锋,陈永平..基于石墨烯/铟砷量子点/砷化镓异质结新型光电探测器[J].红外与毫米波学报,2019,38(3):269-274,289,7.基金项目
Supported by the National Natural Science Foundation of China (61474130,U1531109),the Natural Science Foundation of Shanghai(17142200100),and Chinese Academy of Sciences via Hundred Talents Program （61474130,U1531109）
