红外与毫米波学报2019，Vol.38Issue(3)：275-280,6.DOI:10.11972/j.issn.1001-9014.2019.03.003
数字递变异变赝衬底上2.6μm In0.83Ga0.17As/InP光电探测器的性能改进
Improved performances of 2.6 μm In0.83Ga0.17As/InP photodetectors on digitally-graded metamorphic pseudo-substrates
摘要
Abstract
Impacts of the total period number for the In0.83Al0.17As/In0.52Al0.48As digitally-graded metamorphic buffer (DGMB) on the performances of 2.6 μm In0.83Ga0.17As photodiodes (PDs) have been investigated.An increase of the total period number from 19 to 38 for the In0.83Al0.17As/In0.52Al0.48As DGMB with the same thickness has shown improved crystal qualities for the In0.83Ga0.17As/In0.83Al0.17As photodiode layers grown on such pseudosubstrates.An increased strain relaxation degree up to 99.8％,a reduced surface roughness,enhanced photoluminescence intensities as well as photo responsivities,and suppressed dark currents are observed simultaneously for the In0.83Ga0.17As photodiode on the DGMB with a period number of 38.These results suggest that with more periods,DGMB can restrain the transmission of the threading dislocations more efficiently and reduce the residual defect density.关键词
数字递变/异变/缓冲/InGaAs/光电探测器Key words
digital-grading/metamorphic/buffer/InGaAs/photodetectors分类
信息技术与安全科学引用本文复制引用
师艳辉,杨楠楠,马英杰,顾溢,陈星佑,龚谦,张永刚..数字递变异变赝衬底上2.6μm In0.83Ga0.17As/InP光电探测器的性能改进[J].红外与毫米波学报,2019,38(3):275-280,6.基金项目
Supported by the National Key Research and Development Program of China (2017YFB0405300,2016YFB0402400),National Natural Science Foundation of China (61605232,61675225,61775228),and the Shanghai Rising-Star Program (17QA1404900) （2017YFB0405300,2016YFB0402400）
