红外与毫米波学报2019，Vol.38Issue(3)：310-314,337,6.DOI:10.11972/j.issn.1001-9014.2019.03.009
基于0.13μm SiGe BiCMOS工艺的在片背腔贴片天线
Cavity-backed on-chip patch antenna in 0.13 μm SiGe BiCMOS technology
摘要
Abstract
This letter presents a 340 GHz cavity-backed on-chip patch antenna design and fabrication using standard 0.13 μm SiGe BiCMOS technology.The patch placed at AM layer is fed by a stfipline at LY layer through via holes from LY to AM layer.The via holes are built between the top metal layer (AM layer) and the ground plane (M1 layer) to form a cavity which improves the impedance matching bandwidth and the radiation performances of the antenna.The proposed antenna shows a simulated impedance bandwidth of 9.2 GHz from 335.6 to 344.8 GHz for S11 less than-10 dB.The simulated gain of the antenna at 340 GHz is 3.2 dBi.The total area of the antenna is 0.5 × 0.56 mm2.关键词
0.13μm SiGe BiCMOS工艺/背腔/贴片天线/在片天线Key words
0.13 μm SiGe BiCMOS technology/cavity backed/patch antenna/on-chip antenna分类
信息技术与安全科学引用本文复制引用
肖军,李秀萍,齐紫航,朱华,冯魏巍..基于0.13μm SiGe BiCMOS工艺的在片背腔贴片天线[J].红外与毫米波学报,2019,38(3):310-314,337,6.基金项目
Supported by the National Natural Science Foundation of China (61601050) （61601050）
the project (6140135010116DZ08001,6140518040116DZ02001) （6140135010116DZ08001,6140518040116DZ02001）
