深圳大学学报（理工版）2019，Vol.36Issue(4)：375-381,7.DOI:10.3724/SP.J.1249.2019.04375
退火温度对ZnO薄膜晶体管电学性能的影响
Effect of annealing temperature on the electrical properties of ZnO thin-film transistors
摘要
Abstract
In order to study the influence of annealing temperature (from room temperature to 500 ℃) on the electrical properties of ZnO thin film and thin-film transistors (TFTs),we carefully characterize the ZnO-TFT by using a wide range of techniques including X-ray diffraction (XRD),scanning electron microscope (SEM),atomic force microscopy (AFM),X-ray photoelectron spectroscopy (XPS),and photoluminescence (PL).The results show that the ZnO-TFTs annealed at 400 ℃ have the best performance with mobility of 2.7 cm2/Vs,threshold voltage of 4.6 V,on/off current ratio of 5 × 105 and subthreshold swing of 0.98 V/Dec.The improvement of the electrical performance could be attributed to the decrease of carrier concentration,the enhancement of crystallization in ZnO films,and the improvement of interface between the oxide semiconductor layer and the insulation layer.关键词
薄膜材料/ZnO/薄膜晶体管/退火温度/迁移率/界面Key words
film materials/ZnO/thin-film transistor/annealing temperature/mobility/interface分类
信息技术与安全科学引用本文复制引用
覃金牛,方明,曾玉祥,吕有明,温喜章,冯武昌,许望颖,朱德亮,曹培江,柳文军,韩舜,刘新科..退火温度对ZnO薄膜晶体管电学性能的影响[J].深圳大学学报（理工版）,2019,36(4):375-381,7.基金项目
National Natural Science Foundation of China (61704111,51872187,11774241,51371120) （61704111,51872187,11774241,51371120）
Natural Science Foundation of Guangdong Province (2017A030310524) （2017A030310524）
Science and Technology Foundation of Shenzhen (JCYJ20170818143417082,JCYJ20170817100611468)国家自然科学基金资助项目(61704111,51872187,11774241,51371120) （JCYJ20170818143417082,JCYJ20170817100611468）
广东省自然科学基金资助项目(2017A030310524) （2017A030310524）
深圳市科技基金资助项目(JCYJ20170818143417082,JCYJ20170817100611468) （JCYJ20170818143417082,JCYJ20170817100611468）
深圳大学自然科学基金资助项目(827000243,2017001) （827000243,2017001）
