电子科技学刊2019，Vol.17Issue(2)：97-108,12.DOI:10.11989/JEST.1674-862X.70929112
Characterization of Cd1-xZnxTe (0≤x≤1) Nanolayers Grown by Atomic Layer Deposition on GaSb and GaAs (001) Oriented Substrates
Characterization of Cd1-xZnxTe (0≤x≤1) Nanolayers Grown by Atomic Layer Deposition on GaSb and GaAs (001) Oriented Substrates
Joel Díaz-Reyes 1Roberto Saúl Castillo-Ojeda 2José Eladio Flores-Mena3
作者信息
- 1. Center for Research in Applied Biotechnology, Instituto Politécnico Nacional, Tepetitla 90700, Mexico
- 2. Universidad Politécnica de Pachuca, Pachuca 43830, Mexico
- 3. Faculty of Sciences of the Electronics, Autonomous University of Puebla, Puebla 72570, Mexico
- 折叠
摘要
关键词
Ⅲ-Ⅴ substrates/atomic layer deposition (ALD)/defect generation mechanism/ternary alloy Cd1-xZnxTe/Zn and Cd mixtureKey words
Ⅲ-Ⅴ substrates/atomic layer deposition (ALD)/defect generation mechanism/ternary alloy Cd1-xZnxTe/Zn and Cd mixture引用本文复制引用
Joel Díaz-Reyes,Roberto Saúl Castillo-Ojeda,José Eladio Flores-Mena..Characterization of Cd1-xZnxTe (0≤x≤1) Nanolayers Grown by Atomic Layer Deposition on GaSb and GaAs (001) Oriented Substrates[J].电子科技学刊,2019,17(2):97-108,12.
