烟草科技2019，Vol.52Issue(8)：1-8,8.
硅对镉胁迫下烟草叶片PSⅡ叶绿素荧光特性的影响
Effects of silicon on chlorophyll fluorescence characteristics of PSⅡin tobacco leaves under cadmium stress
摘要
Abstract
To study the effects of silicon on the chlorophyll fluorescence characteristics of photosystemⅡ(PSⅡ) in tobacco leaves under cadmium stress, an indoor hydroponic experiment was conducted to analyze the characteristics of fast chlorophyll fluorescence induction dynamics of PSⅡ in cv. Yunyan87. The results showed that the fast chlorophyll fluorescence induction dynamics curve(OJIP)changed under cadmium stress, and both the minimum fluorescence value(Fo)and maximum fluorescence value(Fm)significantly decreased. Under cadmium stress, the maximum photochemical efficiency(Fv/Fm), oxygen evolution complex(OEC), receptor library capacity (Sm), quantum yield for electron transport(φEo), density of reaction centers(RC/CSo)and performance index(PIabs) decreased. While the relative variable fluorescence at K-step(Vk), the relative variable fluorescence at J-step(VJ) and approximated initial slope of the fluorescence transient(Mo)significantly increased. These data indicated that cadmium stress damaged tobacco leaf’s photosynthetic integrity, altered the quantity of per PSⅡ reaction centers and the harmfulness to donor- and acceptor-side of PSⅡ and inhibited photosynthetic electron transmission. The fluorescence kinetic curves of Cd0.05+Si and Cd0.10+Si treatments coincided with that of the control. OEC, Sm, φEo, RC/CSo and PIabs were significantly increased, while Vk, VJ and Mo significantly decreased. Therefore, Cd0.05+Si and Cd0.10+Si treatments stabilized the structure and function of PSⅡ, alleviated cadmium damage to photosynthesis of tobacco leaves and was beneficial to photosynthetic electron transport.关键词
烟草/镉胁迫/硅/叶绿素荧光Key words
Tobacco/Cadmium stress/Silicon/Chlorophyll fluorescence分类
农业科技引用本文复制引用
罗丽娟,唐莉娜,陈星峰,李延..硅对镉胁迫下烟草叶片PSⅡ叶绿素荧光特性的影响[J].烟草科技,2019,52(8):1-8,8.基金项目
中国烟草总公司福建省公司科研项目"硅对烤烟产量品质的影响及其施用技术研究"(闽烟合同[2013]63号). （闽烟合同[2013]63号）
