东南大学学报（英文版）2019，Vol.35Issue(3)：341-350,10.DOI:10.3969/j.issn.1003-7985.2019.03.010
硅与二氧化硅界面的有限尺寸效应对纳米晶体管栅漏电流的影响
Influence of the finite size effect of Si(001)/SiO2 interface on the gate leakage current in nano-scale transistors
摘要
Abstract
With the device size gradually approaching the physical limit,the small changes of the Si (001)/SiO2 interface in silicon-based devices may have a great impact on the device characteristics.Based on this,the bridge-oxygen model is used to construct the interface of different sizes,and the finite size effect of the interface between fine electronic structure silicon and silicon dioxide is studied.Then,the influence of the finite size effect on the electrical properties of nanotransistors is calculated by using the first principle.Theoretical calculation results demonstrate that the bond length of Si-Si and Si-O shows a saturate tendency when the size increases,while the absorption capacity of visible light and the barrier of the interface increase with the decrease of size.Finally,the results of two tunneling current models show that the finite size effect of Si(001)/SiO2 interface can lead to a larger change in the gate leakage current of nano-scale devices,and the transition region and image potential,which play an important role in the calculation of interface characteristics of large-scale devices,show different sensitivities to the finite size effect.Therefore,the finite size effect of the interface on the gate leakage current cannot be ignored in nano-scale devices.关键词
有限尺寸效应/隧穿电流/纳米级晶体管Key words
finite size effect/tunneling current/nano-scale transistor分类
信息技术与安全科学引用本文复制引用
李海霞,季爱明,朱灿焰,毛凌锋..硅与二氧化硅界面的有限尺寸效应对纳米晶体管栅漏电流的影响[J].东南大学学报（英文版）,2019,35(3):341-350,10.基金项目
The National Natural Science Foundation of China (No.61774014),Postgraduate Research & Practice Innovation Program of Jiangsu Province(No.KYZZ15_0331),the Natural Science Foundation of the Jiangsu Higher Education Institutions of China (No.19KJB510060). （No.61774014）
