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Hydride vapor phase epitaxy for gallium nitride substrate

Jun Hu Hongyuan Wei Shaoyan Yang Chengming Li Huijie Li Xianglin Liu Lianshan Wang Zhanguo Wang

半导体学报（英文版）2019，Vol.40Issue(10)：85-94,10.

半导体学报（英文版）2019，Vol.40Issue(10)：85-94,10.DOI:10.1088/1674-4926/40/10/101801

Hydride vapor phase epitaxy for gallium nitride substrate

Jun Hu ¹Hongyuan Wei ²Shaoyan Yang ¹Chengming Li ²Huijie Li ¹Xianglin Liu ²Lianshan Wang ¹Zhanguo Wang²

作者信息

1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
折叠

摘要

关键词

hydride vapor phase epitaxy/gallium nitride/substrate

Key words

hydride vapor phase epitaxy/gallium nitride/substrate

引用本文复制引用

Jun Hu,Hongyuan Wei,Shaoyan Yang,Chengming Li,Huijie Li,Xianglin Liu,Lianshan Wang,Zhanguo Wang..Hydride vapor phase epitaxy for gallium nitride substrate[J].半导体学报（英文版）,2019,40(10):85-94,10.

基金项目

This work was supported by the National Key Research and Development Plan (No.2017YFB0404201) and the National Science Foundation of China (Nos.61774147,61874108). （No.2017YFB0404201）

半导体学报（英文版）

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ISSN：1674-4926

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