红外与毫米波学报2019，Vol.38Issue(5)：549-553,5.DOI:10.11972/j.issn.1001-9014.2019.05.001
InAs基InAs/Ga(As)SbⅡ类超晶格长波红外探测器湿法腐蚀研究
Wet etching for InAs-based InAs/Ga(As)Sb superlattice long wavelength infrared detectors
摘要
Abstract
Wet chemical etching of InAs-based InAs/Ga(As)Sb superlattice long wavelength infrared photodiodes was studied in this paper.The etching experiments using citric acid,orthophosphoric acid and hydrogen peroxide were carried out on InAs,GaSb bulk materials and InAs/Ga (As)Sb superlattices with different solution ratios.An optimized etching solution for the InAs-based superlattices has been obtained.The etched surface roughness is only 1 nm.InAs-based superlattice LWIR detectors with 50 ％ cut-off wavelength of 12 μm were fabricated.The photodetectors etched with optimized solution ratio show low surface leakage characteristic.At 81 K temperature,the surface resistivity ρsurface of the detector is 4.4 × 103 Ωcm.关键词
InAs/Ga (As)Sb/Ⅱ类超晶格/湿法腐蚀/表面形貌Key words
InAs/Ga(As)Sb/type-Ⅱ superlattice/wet chemical etching/surface morphology分类
信息技术与安全科学引用本文复制引用
吴佳,徐志成,陈建新,何力..InAs基InAs/Ga(As)SbⅡ类超晶格长波红外探测器湿法腐蚀研究[J].红外与毫米波学报,2019,38(5):549-553,5.基金项目
Supported by the National Natural Science Foundation of China(61534006,61974152,61505237,61505235,61404148,61176082),the National Key Research and Development Program of China (2016YFB0402403),and the Youth Innovation Promotion Association,CAS (2016219) This work was supported by the National Natural Science Foundation of China (NSFC) with Grant No.61534006,61505237,61505235,61404148,the National Key Research and Development Program of China with Grant No.2016YFB0402403 and the Natural Science Foundation of Shanghai with Grant No.15ZR1445600 and No.16ZR1447900. （61534006,61974152,61505237,61505235,61404148,61176082）
