红外与毫米波学报2019，Vol.38Issue(5)：559-565,7.DOI:10.11972/j.issn.1001-9014.2019.05.003
利用大周期光子晶体结构增强InAs/GaAs量子点的激发态发光
Enhancement of excited-state emission of InAs/GaAs quantum dots with large-period photonic crystal
摘要
Abstract
In this study,the photoluminescence spectra of InAs/GaAs quantum dots material with photonic crystals were investigated by laser diode excitation.The photonic crystals were fabricated in the material of InAs/GaAs quantum dots by laser holography and wet etching method.It was found that the spectra from quantum dots with photonic crystals appeared multi-peak structure;the enhancement and modification to the short-wavelength component were more pronounced than those to the long-wavelength components.The photoluminescence from InAs/GaAs quantum dots was modified by photonic crystals,and the emission from excited states was significantly enhanced.关键词
量子点/光子晶体/激光全息曝光/光致发光光谱Key words
quantum dots/photonic crystal/laser holography/photoluminescence spectra分类
数理科学引用本文复制引用
秦璐,徐波,许兴胜..利用大周期光子晶体结构增强InAs/GaAs量子点的激发态发光[J].红外与毫米波学报,2019,38(5):559-565,7.基金项目
Supported by National Key Research and Development Program of China (2016YFA0301200),the Beijing Science and Technology Project no.D171100004817002,and the National Natural Science Foundation of China (61575191,61627820,61875252) （2016YFA0301200）
