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Fully-integrated ultra-wide band LNA in 0.18μm CMOS technology for 3-10 GHz applications

Du Jianchang Fan Chen Wang Zhigong Xu Jian

高技术通讯（英文版）2019，Vol.25Issue(4)：364-368,5.

高技术通讯（英文版）2019，Vol.25Issue(4)：364-368,5.DOI:10.3772/j.issn.1006-6748.2019.04.003

Fully-integrated ultra-wide band LNA in 0.18μm CMOS technology for 3-10 GHz applications

Du Jianchang ¹Fan Chen ¹Wang Zhigong ¹Xu Jian¹

作者信息

1. Institute of RF-&OE-ICs, Southeast University, Nanjing 210096, P.R.China
折叠

摘要

关键词

ultra wide band (UWB)/self-biased/current-reused/gain compensation/CMOS low noise amplifer ( LNA)

Key words

ultra wide band (UWB)/self-biased/current-reused/gain compensation/CMOS low noise amplifer ( LNA)

引用本文复制引用

Du Jianchang,Fan Chen,Wang Zhigong,Xu Jian..Fully-integrated ultra-wide band LNA in 0.18μm CMOS technology for 3-10 GHz applications[J].高技术通讯（英文版）,2019,25(4):364-368,5.

基金项目

Supported by the National Natural Science Foundation of China (No.61534003, 61874024, 61871116). （No.61534003, 61874024, 61871116）

高技术通讯（英文版）

OAEI

ISSN：1006-6748

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