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A compact two-dimensional analytical model of the electrical characteristics of a triple-material double-gate tunneling FET structure

C.Usha P.Vimala

半导体学报（英文版）2019，Vol.40Issue(12)：135-141,7.

半导体学报（英文版）2019，Vol.40Issue(12)：135-141,7.DOI:10.1088/1674-4926/40/12/122901

A compact two-dimensional analytical model of the electrical characteristics of a triple-material double-gate tunneling FET structure

C.Usha ¹P.Vimala¹

作者信息

1. Department of Electronics and Communication Engineering, Dayananda Sagar College of Engineering, Bangalore-560078, KA, India
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摘要

关键词

triple-material double-gate TFET/surface potential/lateral and vertical electric field/drain current/TCAD simulation

Key words

triple-material double-gate TFET/surface potential/lateral and vertical electric field/drain current/TCAD simulation

引用本文复制引用

C.Usha,P.Vimala..A compact two-dimensional analytical model of the electrical characteristics of a triple-material double-gate tunneling FET structure[J].半导体学报（英文版）,2019,40(12):135-141,7.

基金项目

This work was supported by Women Scientist Scheme-A,Department of Science and Technology,New Delhi,Government of India,under the Grant SR/WOS-A/ET-5/2017. （）

半导体学报（英文版）

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ISSN：1674-4926

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