红外与毫米波学报2019，Vol.38Issue(6)：683-689,7.DOI:10.11972/j.issn.1001-9014.2019.06.001
基于GaN TMIC集成片上天线技术的太赫兹功率放大器
Terahertz power amplifier integrated with on-chip antenna using GaN TMIC technology
摘要
Abstract
This paper presents a transmitter-type TMIC integrated with a rectangular microstrip patch antenna and a power amplifier. The TMIC was fabricated with GaN HEMT technology for high power density and efficient in-tegration. The on-chip antenna was designed as a power radiator and a frequency-dependent output load tuner of the power amplifier. Load-pull technique was used to realize a good impedance match between the amplifier and the antenna. Over a bandwidth of 100～110 GHz,the power amplifier can deliver an average output of 25. 2 dBm with a power-added efficiency(PAE)of 5. 83％. Good radiation characteristics of the TMIC have been achieved, showing a 10-dB bandwidth of 1. 5 GHz and an estimated equivalent isotropic radiated power(EIRP)of 25. 5 dBm at 109 GHz.关键词
单片太赫兹集成电路技术/氮化镓高电子迁移率晶体管/有源集成天线/辐射方向图Key words
TMIC technology/GaN HEMT/active integrated antenna/radiation pattern分类
数理科学引用本文复制引用
王旭东,吕昕,郭大路,李明迅,程功,刘嘉山,于伟华..基于GaN TMIC集成片上天线技术的太赫兹功率放大器[J].红外与毫米波学报,2019,38(6):683-689,7.基金项目
Supported by National Natural Science Foundation of China （）
