红外与毫米波学报2020，Vol.39Issue(1)：1-5,5.DOI:10.11972/j.issn.1001-9014.2020.01.001
退火温度对电子束蒸发沉积硅薄膜结构和光学性能的影响
The influence of annealing temperature on the structure and optical properties of silicon films deposited by electron beam evaporation
摘要
Abstract
In this paper,the influence of annealing temperature on the structure and optical properties of silicon films was systemically investigated. Silicon films were deposited by electron beam evaporation and then annealed in N2 atmosphere within a temperature range from 200 to 500 °C. The films were characterized by X-ray diffrac?tion(XRD),Raman spectroscopy,electronic-spin resonance(ESR)and optical transmittance measurement,re?spectively. With annealing temperature increased,the amorphous network order of silicon films was improved on the short and medium range and the defect density decreased remarkably. When sample being annealed at 400°C, the extinction coefficient k decreased from 6. 14×10-3 to a minimum value of 1. 02×10-3(at 1000 nm),which was due to the lowest defect density,about one fifth of the as-deposited sample. The results showed that annealing at an appropriate temperature could effectively reduce the optical absorption of silicon films in the near infrared re?gion,which were very critical for the application in optical thin film coating devices.关键词
光学薄膜/硅薄膜/光学性能/退火Key words
optical coatings/silicon films/optical properties/annealing分类
数理科学引用本文复制引用
刘保剑,段微波,李大琪,余德明,陈刚,刘定权..退火温度对电子束蒸发沉积硅薄膜结构和光学性能的影响[J].红外与毫米波学报,2020,39(1):1-5,5.基金项目
Supported by the National Natural Science Foundation of China(61605229) （61605229）
Innovation Program of Shanghai Institute of Technical Phys?ics,Chinese Academy of Sciences(CX-129) （CX-129）
