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Bi2O2Se纳米带的气-液-固生长与高性能晶体管的构筑

谭聪伟 李天然 高鹏 彭海琳 于梦诗 许适溥 吴金雄 陈树林 赵艳 刘聪 张亦弛 涂腾

物理化学学报2020,Vol.36Issue(1):142-148,7.
物理化学学报2020,Vol.36Issue(1):142-148,7.DOI:10.3866/PKU.WHXB201908038

Bi2O2Se纳米带的气-液-固生长与高性能晶体管的构筑

Vapor-Liquid-Solid Growth of Bi2O2Se Nanoribbons for High-Performance Transistors

谭聪伟 1李天然 2高鹏 1彭海琳 3于梦诗 1许适溥 2吴金雄 1陈树林 1赵艳 1刘聪 3张亦弛 1涂腾2

作者信息

  • 1. 北京大学化学与分子工程学院,北京分子科学国家研究中心,北京纳米碳科学与工程中心,纳米化学中心,北京 100871
  • 2. 北京大学前沿交叉学科研究院,北京 100871
  • 3. 北京大学物理学院,电子显微镜实验室,国际量子材料中心,北京 100871
  • 折叠

摘要

Abstract

Nanostructured bismuth oxyselenide (Bi2O2Se) semiconductor, a two-dimensional (2D) materials with high-mobility, air-stability, and tunable bandgap, has recently emerged as a candidate of channel material for future digital (electronic and optoelectronic) applications. In terms of material morphology, some basic issues will be addressed when a two-dimensional layered crystal is shaped into a one-dimensional (1D) geometry due to size effect; these include the space-confined transport in a plane, which leads to dramatic changes in electronic, optical, and thermal properties. These novel 1Dnanostructures with unique properties are an optimal choice for fabricating next-generation integrated circuits and functional devices within the nanometer scale such as gate-all-around field-effect transistors, single-electron transistors, chemical sensors, and THz detectors. As one of the high-mobility 2D semiconductor, 1D high-quality Bi2O2Se nanoribbons could be promising for applications in high-performance transistors; however, their synthesis has not been completely developed yet. In our study, we report on the facile growth of Bi2O2Se nanoribbons on mica substrates via a bismuth-catalyzed vapor-liquid-solid (VLS) mechanism. The preparation of Bi2O2Se nanoribbons is based on a previous work that emphasized on the oxidation of Bi2Se3 in a chemical vapor deposition (CVD) system and the use of bismuth (Bi) particlesas the precursor of Bi catalysis. The morphology, composition, and structure of the as-grown Bi2O2Se nanoribbons were characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), Raman spectroscopy, transmission electron microscopy (TEM), as well as other methods. For a Bi mediated VLS growth process, the growth of Bi2O2Se nanoribbons can be self-assembled; further, in this process, as-grown epitaxial Bi2O2Se nanoribbons are free-standing with out-of-plane morphology on the mica substrate. Additionally, combining the spherical aberration corrected transmission electron microscope (ACTEM) and selected electron diffraction (SAED) methods, we discovered that the as-synthesized Bi2O2Se nanoribbons were single crystalline with high quality. We further investigated the controllable growth for domain size by optimizing the growth temperature of the Bi2O2Se nanoribbons. As-synthesized single-crystal Bi2O2Se nanoribbons have widths in the range of 100 nm to 20 μm and lengths in the sub-millimeter range. By employing a polymer poly(methyl methacrylate) (PMMA) assisted clean transfer method with the assistance of deionized water, the Bi2O2Se nanoribbons can be easily transferred onto a SiO2/Si substrate. Fabricated into the top-gated field-effect device, the Bi2O2Se nanoribbon sample (transferred to the SiO2/Si substrate) exhibited high electronic performances; these included a high electron mobility of ~220 cm2·V?1·s?1 at room temperature, good switching behavior with on/off ratio of >106, and high on current density of ~42 μA·μm?1 at a channel length of 10 μm. Therefore, Bi2O2Se nanoribbons are expected to be a promising materials for building high-performance transistors in the future.

关键词

Bi2O2Se/气-液-固生长/纳米带/化学气相沉积/高迁移率

Key words

Bismuth oxyselenide/Vapor-liquid-solid growth/Nanoribbons/CVD/High mobility

分类

化学化工

引用本文复制引用

谭聪伟,李天然,高鹏,彭海琳,于梦诗,许适溥,吴金雄,陈树林,赵艳,刘聪,张亦弛,涂腾..Bi2O2Se纳米带的气-液-固生长与高性能晶体管的构筑[J].物理化学学报,2020,36(1):142-148,7.

基金项目

The project was supported by the National Natural Science Foundation of China (21733001,21525310).国家自然科学基金(21733001,21525310)资助项目 (21733001,21525310)

物理化学学报

OA北大核心CSCDCSTPCDSCI

1000-6818

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