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First-principles exploration of defect-pairs in GaN

He Li Menglin Huang Shiyou Chen

半导体学报（英文版）2020，Vol.41Issue(3)：25-33,9.

半导体学报（英文版）2020，Vol.41Issue(3)：25-33,9.DOI:10.1088/1674-4926/41/3/032104

First-principles exploration of defect-pairs in GaN

He Li ¹Menglin Huang ¹Shiyou Chen¹

作者信息

1. key Laboratory of Polar Materials and Devices(MOE)and Department of Electronics, East China Normal University,Shanghai 200241, China
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摘要

关键词

GaN/first-principles calculations/radiation damage/defect-pairs/point defects

Key words

GaN/first-principles calculations/radiation damage/defect-pairs/point defects

引用本文复制引用

He Li,Menglin Huang,Shiyou Chen..First-principles exploration of defect-pairs in GaN[J].半导体学报（英文版）,2020,41(3):25-33,9.

基金项目

The authors thank Profs.Yongsheng Zhang and Yonggang Li for telling us the importance of defect-pairs in the simulation of radiation damage.This work was supported by the Science Challenge Project (TZ2018004),National Natural Science Foundation of China (NSFC) under grant Nos.61722402 and 91833302,National Key Research and Development Program of China (2016YFB0700700),Shanghai Academic/Technology Research Leader (19XD1421300),Fok Ying Tung Education Foundation (161060) and the Fundamental Research Funds for the Central Universities. （TZ2018004）

半导体学报（英文版）

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ISSN：1674-4926

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