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Memory Analysis for Memristors and Memristive Recurrent Neural Networks

Gang Bao Yide Zhang Zhigang Zeng

自动化学报（英文版）2020，Vol.7Issue(1)：96-105,10.

自动化学报（英文版）2020，Vol.7Issue(1)：96-105,10.DOI:10.1109/JAS.2019.1911828

Memory Analysis for Memristors and Memristive Recurrent Neural Networks

Gang Bao ¹Yide Zhang ²Zhigang Zeng³

作者信息

1. Hubei Key Laboratory of Cascaded Hydropower Stations Operation and Control, Electrical Engineering and New Energy, China Three Gorges University, Yichang 443002
2. Hubei Key Laboratory of Applied Mathematics(Hubei University), Wuhan 430074, China
3. Department of Medical Engineering, California Institute of Technology, Pasadena, California 91125 USA
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摘要

关键词

Dopant drift/memory/memristive neural networks/memristor

Key words

Dopant drift/memory/memristive neural networks/memristor

引用本文复制引用

Gang Bao,Yide Zhang,Zhigang Zeng..Memory Analysis for Memristors and Memristive Recurrent Neural Networks[J].自动化学报（英文版）,2020,7(1):96-105,10.

基金项目

The work was supported by the National Natural Science Foundation of China (61876097,61673188,61761130081),the National Key Research and Development Program of China (2016YFB0800402),the Foundation for Innovative Research Groups of Hubei Province of China (2017CFA005),and the Fundamental Research Funds for the Central Universities (2017KFXKJC002). （61876097,61673188,61761130081）

自动化学报（英文版）

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