红外与毫米波学报2019，Vol.38Issue(4)：403-407,5.DOI:10.11972/j.issn.1001-9014.2019.04.002
高边缘击穿和扩展光谱的圆形单光子雪崩二极管
Circular single-photon avalanche diode with high premature edge breakdown and extended spectrum
摘要
Abstract
This paper presents a 0.18 μa complementary metal-oxide-semiconductor (CMOS) technology high premature edge breakdown,extended spectrum and low dark count rate circular single-photon avalanche diode (SPAD) which together form a novel wide spectrum fluorescence correlation spectroscopy (FCS) detector.The circular device consists of a p +/deep n-well junction,a p-well guard-ring,and a poly guard-ring.Simulations on a Silvaco TCAD 3D device also show that the 10 μm-diameter circular p +/deep n-well SPAD device has high premature edge breakdown characteristics.Moreover,compared to the SPAD p +/n-well junction,the p +/deep nwell junction has a longer wavelength response and spectral expansion.The device achieves wide spectral sensitivity enabling greater than 40％ photon detection probability from 490 to 775 nm wavelength at 0.5 V excess bias.The circular p +/deep n-well SPAD has fine avalanche breakdown (15.14 V) and a low dark count rate of 638 Hz at 25℃.关键词
单光子雪崩二极管(SPAD)/边缘击穿/暗计数率/光谱扩展Key words
single-photon avalanche diode(SPAD)/premature edge breakdown (PEB)/dark count rate(DCR)/spectral expansion分类
信息技术与安全科学引用本文复制引用
金湘亮,曾朵朵,彭亚男,杨红姣,蒲华燕,彭艳,罗均..高边缘击穿和扩展光谱的圆形单光子雪崩二极管[J].红外与毫米波学报,2019,38(4):403-407,5.基金项目
Supported by National Natural Science Foundation of China (61774129,61827812,61704145),and Changsha Science and Technology Project (kq1801035) （61774129,61827812,61704145）
