红外与毫米波学报2019，Vol.38Issue(4)：412-418,7.DOI:10.11972/j.issn.1001-9014.2019.04.004
1.55μm AlGaInAs/InP小发散角量子阱激光器的仿真和制备
Simulation and fabrication of 1.55 μm AlGaInAs/InP quantum well lasers with low beam divergence
摘要
Abstract
1.55 μm A1GaInAs/InP quantum well lasers with low beam divergence have been theoretically designed and experimentally fabricated.An asymmetrical mode expand layer (MEL) was inserted in lower cladding to expand near field intensity distribution and decrease internal loss.Simulation results showed that the use of MEL didn't influence the laser performance negatively but dramatically decreased the vertical beam divergence at the cost of slightly increase of threshold current.And the experiment results showed high agreement to it.With a 4 μmwide and 1000 μm-long ridge waveguide laser with MEL,the threshold current and output power of single facet without coating is 56 mA and 17.38 mw@120 mA,and the slope efficiency is 0.272 W/A.The vertical beam divergence is 29.6° and decreases about 35.3％ compared to that of typical lasers.关键词
铟磷基激光器/发散角/光场分布Key words
InP-based lasers/beam divergence/intensity distribution分类
数理科学引用本文复制引用
熊迪,郭文涛,郭小峰,刘海峰,廖文渊,刘维华,张杨杰,曹营春,谭满清..1.55μm AlGaInAs/InP小发散角量子阱激光器的仿真和制备[J].红外与毫米波学报,2019,38(4):412-418,7.基金项目
Supported by the Joint Science Foundation of Chinese Academy of Science. （）
