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Growth of aligned SnS nanowire arrays for near infrared photodetectors

Guozhen Shen Haoran Chen Zheng Lou

半导体学报(英文版)2020,Vol.41Issue(4):95-100,6.
半导体学报(英文版)2020,Vol.41Issue(4):95-100,6.DOI:10.1088/1674-4926/41/4/042602

Growth of aligned SnS nanowire arrays for near infrared photodetectors

Growth of aligned SnS nanowire arrays for near infrared photodetectors

Guozhen Shen 1Haoran Chen 2Zheng Lou1

作者信息

  • 1. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2. Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 折叠

摘要

关键词

photodetectors/nanowires/infrared/aligned

Key words

photodetectors/nanowires/infrared/aligned

引用本文复制引用

Guozhen Shen,Haoran Chen,Zheng Lou..Growth of aligned SnS nanowire arrays for near infrared photodetectors[J].半导体学报(英文版),2020,41(4):95-100,6.

基金项目

This work was financial supported by National Natural Science Foundation of China (61625404,61888102). (61625404,61888102)

半导体学报(英文版)

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1674-4926

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