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一款2 G/s采样率20 GHz带宽主从式跟踪保持电路设计研究

张贵福 周劼 刘友江

强激光与粒子束2020,Vol.32Issue(6):73-80,8.
强激光与粒子束2020,Vol.32Issue(6):73-80,8.DOI:10.11884/HPLPB202032.190421

一款2 G/s采样率20 GHz带宽主从式跟踪保持电路设计研究

A 2 G/s sampling rate, 20 GHz bandwidth master-slave track-and-hold amplifier in 0.13 μm SiGe BiCMOS technology

张贵福 1周劼 2刘友江1

作者信息

  • 1. 中国工程物理研究院电子工程研究所,四川绵阳 621900
  • 2. 中国工程物理研究院,四川绵阳 621900
  • 折叠

摘要

Abstract

A fully-differential master-slave track-and-hold amplifier (MS-THA), with 20 GHz bandwidth isdesigned and fabricated using 0.13 μm SiGe BiCMOS technology. The MS-THA employs conventional switched-emitter-follower (SEF) as track-and-hold core circuit, Cherryhooper circuits as band-boosting of input buffer and output buffer. To verify the validity of the above circuits, a single-stage THA is designed together with the MS-THA. Operating with a single +3.3 V supply, 0 V input direct-voltage, 2 G/s sampling and ?3 dBm input power, the MS-THA achieves a single-ended spurious free dynamic range (SFDR) of less than ?23.5 dB at frequency of up to 20 GHz, and total power consumption of about 300 mW.

关键词

主从式/跟踪保持放大器/SiGeBiCMOS工艺/无杂散动态范围

Key words

master-slave/track-and-hold amplifier/SiGe BiCMOS/spurious free dynamic range

分类

信息技术与安全科学

引用本文复制引用

张贵福,周劼,刘友江..一款2 G/s采样率20 GHz带宽主从式跟踪保持电路设计研究[J].强激光与粒子束,2020,32(6):73-80,8.

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