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A 0.1-1.5 GHz multi-octave quadruple-stacked CMOS power amplifier

Shizhe Wei Haifeng Wu Qian Lin Mingzhe Zhang

半导体学报（英文版）2020，Vol.41Issue(6)：45-48,4.

半导体学报（英文版）2020，Vol.41Issue(6)：45-48,4.DOI:10.1088/1674-4926/41/6/062401

A 0.1-1.5 GHz multi-octave quadruple-stacked CMOS power amplifier

Shizhe Wei ¹Haifeng Wu ²Qian Lin ³Mingzhe Zhang¹

作者信息

1. School of Microelectronics, Tianjin University, Tianjin 300072, China
2. Chengdu Ganide Technology, Chengdu 610073, China
3. College of Physics and Electronic Information Engineer, Qinghai University for Nationalities, Xining 810007, China
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摘要

关键词

power amplifier/CMOS/stacked/multi-octave/resistive matching

Key words

power amplifier/CMOS/stacked/multi-octave/resistive matching

引用本文复制引用

Shizhe Wei,Haifeng Wu,Qian Lin,Mingzhe Zhang..A 0.1-1.5 GHz multi-octave quadruple-stacked CMOS power amplifier[J].半导体学报（英文版）,2020,41(6):45-48,4.

基金项目

This work was supported by the National Natural Science Foundation of China (No.61841110) and AoShan Talents Outstanding Scientist Program by Pilot National Laboratory for Marine Science and Technology (Qingdao) (No.2017ASTCP-OS03). （No.61841110）

半导体学报（英文版）

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ISSN：1674-4926

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