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Low on-resistance 1.2 kV 4H-SiC power MOSFET with Ron, sp of 3.4 mΩ·cm2

Qiang Liu Qian Wang Hao Liu Chenxi Fei Shiyan Li Runhua Huang Song Bai

半导体学报（英文版）2020，Vol.41Issue(6)：89-92,4.

半导体学报（英文版）2020，Vol.41Issue(6)：89-92,4.DOI:10.1088/1674-4926/41/6/062801

Low on-resistance 1.2 kV 4H-SiC power MOSFET with Ron, sp of 3.4 mΩ·cm2

Qiang Liu ¹Qian Wang ¹Hao Liu ¹Chenxi Fei ¹Shiyan Li ¹Runhua Huang ¹Song Bai¹

作者信息

1. State Key Laboratory of Wide-Bandgap Semiconductor Power Electronic Devices, Nanjing Electronic Devices Institute, Nanjing 210016, China
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摘要

关键词

4H-SiC/electric field strength/floating guard ring/specific on-resistance

Key words

4H-SiC/electric field strength/floating guard ring/specific on-resistance

引用本文复制引用

Qiang Liu,Qian Wang,Hao Liu,Chenxi Fei,Shiyan Li,Runhua Huang,Song Bai..Low on-resistance 1.2 kV 4H-SiC power MOSFET with Ron, sp of 3.4 mΩ·cm2[J].半导体学报（英文版）,2020,41(6):89-92,4.

基金项目

This work was supported by the National Science and Technology Major Project (No.2017YFB0102302). （No.2017YFB0102302）

半导体学报（英文版）

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ISSN：1674-4926

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