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Recent Advances in Strain-Induced Piezoelectric and Piezoresistive Effect-Engineered 2D Semiconductors for Adaptive Electronics and Optoelectronics

Feng Li Tao Shen Cong Wang Yupeng Zhang Junjie Qi Han Zhang

纳微快报（英文）2020，Vol.12Issue(8)：236-279,44.

Recent Advances in Strain-Induced Piezoelectric and Piezoresistive Effect-Engineered 2D Semiconductors for Adaptive Electronics and Optoelectronics

Feng Li ¹Tao Shen ²Cong Wang ¹Yupeng Zhang ¹Junjie Qi ²Han Zhang¹

作者信息

1. Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, People's Republic of China
2. School of Materials Science and Engineering, University of Science and Technology Beijing,Beijing 100083, People's Republic of China
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摘要

关键词

2D semiconductors/Strain/Piezoelectric effect/Piezoresistive effect/Electronic and optoelectronics

Key words

2D semiconductors/Strain/Piezoelectric effect/Piezoresistive effect/Electronic and optoelectronics

引用本文复制引用

Feng Li,Tao Shen,Cong Wang,Yupeng Zhang,Junjie Qi,Han Zhang..Recent Advances in Strain-Induced Piezoelectric and Piezoresistive Effect-Engineered 2D Semiconductors for Adaptive Electronics and Optoelectronics[J].纳微快报（英文）,2020,12(8):236-279,44.

基金项目

This work is supported by the National Natural Science Foundation of China (51572025,51627801,61435010 and 51702219),the State Key Research Development Program of China (2019YFB2203503),Guangdong Basic and Applied Basic Research Foundation (2019A1515110209),the Science and Technology Innovation Commission of Shenzhen (JCYJ20170818093453105,JCYJ20180305125345378),National Foundation of China (41422050303),Beijing Municipal Science & Technology Commission and the Fundamental Research Funds for Central Universities. （51572025,51627801,61435010 and 51702219）

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ISSN：2311-6706

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