红外与毫米波学报2020，Vol.39Issue(3)：295-299,5.DOI:10.11972/j.issn.1001-9014.2020.03.005
一种改进的InP HBT小信号模型的直接提取法
An improved direct extraction method for InP HBT small-signal model
摘要
Abstract
In this paper,an improved direct extraction method to extract the model parameters in InP heterojunc-tion bipolar transistor(HBT)small-signal equivalent circuit is presented and successfully applied to small-signal equivalent circuit of InP HBT. The distributed base-collector capacitance effect is taken into consideration in the adopted model. The extracting process of this method,which extracts parameters in turn from the peripheral para-sitic elements to the intrinsic internal elements,is clearer than other direct extraction methods. Except for the para-sitic parameters,all other parameters are calculated without any simplified approximation. This method relies on S parameters measurement. All of the equivalent circuit parameters are extracted directly from the S parameters without using approximations based on initial values. The direct extraction method is successfully validated on InP HBT in the frequency range of 0. 1～40 GHz,and excellent agreement is achieved between the measured and calculated S parameters over the whole frequency range.关键词
直接提取法/磷化铟异质结双极型晶体管/小信号模型/参数提取Key words
direct extraction method/InP HBT/small-signal model/parameter extraction分类
信息技术与安全科学引用本文复制引用
戚军军,吕红亮,张玉明,张义门,张金灿..一种改进的InP HBT小信号模型的直接提取法[J].红外与毫米波学报,2020,39(3):295-299,5.基金项目
Supported by the National Natural Science Foundation of China(61851405). （61851405）
