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Contact engineering for two-dimensional semiconductors

Peng Zhang Yiwei Zhang Yi Wei Huaning Jiang Xingguo Wang Yongji Gong

半导体学报（英文版）2020，Vol.41Issue(7)：11-26,16.

半导体学报（英文版）2020，Vol.41Issue(7)：11-26,16.DOI:10.1088/1674-4926/41/7/071901

Contact engineering for two-dimensional semiconductors

Peng Zhang ¹Yiwei Zhang ¹Yi Wei ²Huaning Jiang ¹Xingguo Wang ¹Yongji Gong¹

作者信息

1. School of Materials Science and Engineering, Beihang University, Beijing 100191, China
2. State Key Laboratory of Organic-Inorganic Composites, Beijing Key Laboratory of Electrochemical Process and Technology for Materials,Beijing University of Chemical Technology, Beijing 100029 China
折叠

摘要

关键词

two-dimensional materials/contact engineering/Schottky barrier/Fermi level pinning/heterostructures

Key words

two-dimensional materials/contact engineering/Schottky barrier/Fermi level pinning/heterostructures

引用本文复制引用

Peng Zhang,Yiwei Zhang,Yi Wei,Huaning Jiang,Xingguo Wang,Yongji Gong..Contact engineering for two-dimensional semiconductors[J].半导体学报（英文版）,2020,41(7):11-26,16.

基金项目

This work was supported by the National Key R&D Program of China (Grant No.2018YFA0306900) and the Natural Science Foundation of China (Grant No.51872012). （Grant No.2018YFA0306900）

半导体学报（英文版）

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ISSN：1674-4926

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