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Metal-insulator transition in few-layered GaTe transistors

Xiuxin Xia Xiaoxi Li Hanwen Wang

半导体学报（英文版）2020，Vol.41Issue(7)：33-37,5.

半导体学报（英文版）2020，Vol.41Issue(7)：33-37,5.DOI:10.1088/1674-4926/41/7/072902

Metal-insulator transition in few-layered GaTe transistors

Xiuxin Xia ¹Xiaoxi Li ²Hanwen Wang¹

作者信息

1. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
2. School of Material Science and Engineering, University of Science and Technology of China, Hefei 230026 China
折叠

摘要

关键词

metal-insulator transition/gate tunable/GaTe/field effect transistors

Key words

metal-insulator transition/gate tunable/GaTe/field effect transistors

引用本文复制引用

Xiuxin Xia,Xiaoxi Li,Hanwen Wang..Metal-insulator transition in few-layered GaTe transistors[J].半导体学报（英文版）,2020,41(7):33-37,5.

基金项目

This work is supported by the the National Natural Science Foundation of China (NSFC,Grant Nos.11974357,and U1932151),the State Key Research Development Program of China (Grant No.2019YFA0307800). （NSFC,Grant Nos.11974357,and U1932151）

半导体学报（英文版）

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ISSN：1674-4926

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