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Mn doping effects on the gate-tunable transport properties of Cd3As2 films epitaxied on GaAs

Hailong Wang Jialin Ma Qiqi Wei Jianhua Zhao

半导体学报（英文版）2020，Vol.41Issue(7)：39-44,6.

半导体学报（英文版）2020，Vol.41Issue(7)：39-44,6.DOI:10.1088/1674-4926/41/7/072903

Mn doping effects on the gate-tunable transport properties of Cd3As2 films epitaxied on GaAs

Hailong Wang ¹Jialin Ma ²Qiqi Wei ¹Jianhua Zhao²

作者信息

1. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2. Center of Materials Science and Optoelectronics Engineering & CAS Center for Excellence in Topological Quantum Computation,University of Chinese Academy of Sciences, Beijing 100190, China
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摘要

关键词

molecular-beam epitaxy/Dirac semimetal/Cd3As2 film/Mn doping/quantum transport

Key words

molecular-beam epitaxy/Dirac semimetal/Cd3As2 film/Mn doping/quantum transport

引用本文复制引用

Hailong Wang,Jialin Ma,Qiqi Wei,Jianhua Zhao..Mn doping effects on the gate-tunable transport properties of Cd3As2 films epitaxied on GaAs[J].半导体学报（英文版）,2020,41(7):39-44,6.

基金项目

This work is supported by NSFC (Grants Nos.U1632264and 11704374),and the the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant Nos.XDB44000000 and QYZDY-SSW-JSC015). （Grants Nos.U1632264and 11704374）

半导体学报（英文版）

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ISSN：1674-4926

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