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Physical vapor deposited 2D bismuth for CMOS technology

Hanliu Zhao Xinghao Sun Zhengrui Zhu Wen Zhong Dongdong Song Weibing Lu Li Tao

半导体学报（英文版）2020，Vol.41Issue(8)：9-25,17.

半导体学报（英文版）2020，Vol.41Issue(8)：9-25,17.DOI:10.1088/1674-4926/41/8/081001

Physical vapor deposited 2D bismuth for CMOS technology

Hanliu Zhao ¹Xinghao Sun ¹Zhengrui Zhu ¹Wen Zhong ¹Dongdong Song ¹Weibing Lu ²Li Tao³

作者信息

1. School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
2. Center for Flexible RF Technology, Southeast University, Nanjing 211189, China
3. State Key Laboratory of Millimeter Waves, School of Information Science and Engineering, Southeast University, Nanjing 211189, China
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摘要

关键词

bismuthene/2D materials/physical vapor deposition/CMOS/nanoelectronics

Key words

bismuthene/2D materials/physical vapor deposition/CMOS/nanoelectronics

引用本文复制引用

Hanliu Zhao,Xinghao Sun,Zhengrui Zhu,Wen Zhong,Dongdong Song,Weibing Lu,Li Tao..Physical vapor deposited 2D bismuth for CMOS technology[J].半导体学报（英文版）,2020,41(8):9-25,17.

基金项目

This work was supported by the National Natural Science Foundation of China (No.51602051),Jiangsu Province Innovation Talent Program,Jiangsu Province Six-Category Talent Program (No.DZXX-011). （No.51602051）

半导体学报（英文版）

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ISSN：1674-4926

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