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High-performance junction field-effect transistor based on black phosphorus/β-Ga2O3 heterostructure

Chang Li Cheng Chen Jie Chen Tao He Hongwei Li Zeyuan Yang Liu Xie Zhongchang Wang Kai Zhang

半导体学报（英文版）2020，Vol.41Issue(8)：59-65,7.

半导体学报（英文版）2020，Vol.41Issue(8)：59-65,7.DOI:10.1088/1674-4926/41/8/082002

High-performance junction field-effect transistor based on black phosphorus/β-Ga2O3 heterostructure

Chang Li ¹Cheng Chen ²Jie Chen ²Tao He ³Hongwei Li ²Zeyuan Yang ³Liu Xie ⁴Zhongchang Wang ²Kai Zhang⁵

作者信息

1. Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, China
2. i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
3. School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
4. CAS Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
5. Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ),Shenzhen University, Shenzhen 518060, China
折叠

摘要

关键词

two-dimensional semiconductor/black phosphorous/β-gallium oxide/vdWs heterostructure/junction field-effect transistor

Key words

two-dimensional semiconductor/black phosphorous/β-gallium oxide/vdWs heterostructure/junction field-effect transistor

引用本文复制引用

Chang Li,Cheng Chen,Jie Chen,Tao He,Hongwei Li,Zeyuan Yang,Liu Xie,Zhongchang Wang,Kai Zhang..High-performance junction field-effect transistor based on black phosphorus/β-Ga2O3 heterostructure[J].半导体学报（英文版）,2020,41(8):59-65,7.

基金项目

This work was supported by the National Natural Science Foundation of China (Grant No.61922082,61875223,61927813) and the Natural Science Foundation of Jiangsu Province (Grant No.BK20191195).The support from the Vacuum Interconnected Nanotech Workstation (Nano-X) of Suzhou Institute of Nano-tech and Nano-bionics (SINANO),Chinese Academy of Sciences,is also acknowledged. （Grant No.61922082,61875223,61927813）

半导体学报（英文版）

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ISSN：1674-4926

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