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Photo-induced doping effect and dynamic process in monolayer MoSe2

Qian Yang Yongzhou Xue Hao Chen Xiuming Dou Baoquan Sun

半导体学报（英文版）2020，Vol.41Issue(8)：71-75,5.

半导体学报（英文版）2020，Vol.41Issue(8)：71-75,5.DOI:10.1088/1674-4926/41/8/082004

Photo-induced doping effect and dynamic process in monolayer MoSe2

Qian Yang ¹Yongzhou Xue ²Hao Chen ¹Xiuming Dou ²Baoquan Sun¹

作者信息

1. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2. College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
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摘要

关键词

photodoping/monolayer MoSe2/dynamic process/temperature

Key words

photodoping/monolayer MoSe2/dynamic process/temperature

引用本文复制引用

Qian Yang,Yongzhou Xue,Hao Chen,Xiuming Dou,Baoquan Sun..Photo-induced doping effect and dynamic process in monolayer MoSe2[J].半导体学报（英文版）,2020,41(8):71-75,5.

基金项目

This work was supported by the National Natural Science Foundation of China under Grant Nos 61674135,11974342 and 61827823. （）

半导体学报（英文版）

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ISSN：1674-4926

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