First-principle study of puckered arsenene MOSFETOACSCDCSTPCD
First-principle study of puckered arsenene MOSFET
Hengze Qu;Ziwei Lin;Ruijuan Guo;Xiyu Ming;Wenhan Zhou;Shiying Guo;Xiufeng Song;Shengli Zhang;Haibo Zeng
Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, ChinaKey Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, ChinaKey Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, ChinaKey Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, ChinaKey Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, ChinaKey Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, ChinaKey Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, ChinaKey Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, ChinaKey Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
first principletwo-dimensional materialelectronic propertiesarseneneMOSFET
first principletwo-dimensional materialelectronic propertiesarseneneMOSFET
《半导体学报（英文版）》 2020 (8)
85-90,6
This work was financially supported by the Training Program of the Major Research Plan of the National Natural Science Foundation of China (91964103),the Natural Science Foundation of Jiangsu Province (BK20180071),the Fundamental Research Funds for the Central Universities (No.30919011109),and also sponsored by Qing Lan Project of Jiangsu Province,and the Six Talent Peaks Project of Jiangsu Province (Grant No.XCL-035).
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