人工晶体学报2020，Vol.49Issue(8)：1534-1540,1561,8.
Ge掺杂β-Ga2O3晶体的发光性能研究
Study on the Luminescence Properties of Ge-doped β-Ga2O3 Crystals
摘要
Abstract
Ge-doped β-Ga2O3 crystals were grown by the Floating Zone (FZ) method,and the doping effects on the crystal structures were investigated by XRD and Raman spectroscopy.The optical transmission spectra revealed that the optical bandgaps of Ge∶ β-Ga2O3 crystals increase with the increase of Ge doping concentration.Under ultra-violet excitation of 4.67 eV,the emission intensities of Ge∶ β-Ga2O3 crystals are comparable to β-Ga2O3 crystal,while the decay time is faster.关键词
氧化镓/Ge掺杂/发光性能/快衰减Key words
gallium oxide/Ge-doped/luminescence property/fast decay分类
数理科学引用本文复制引用
何诺天,唐慧丽,刘波,张浩,朱智超,赵衡煜,徐军..Ge掺杂β-Ga2O3晶体的发光性能研究[J].人工晶体学报,2020,49(8):1534-1540,1561,8.基金项目
Scientific and Innovative Action Plan of Shanghai (18511110502) （18511110502）
Equipment Pre-research Fund Key Project (6140922010601) （6140922010601）
