溅射功率对磁控溅射法制备MgF2薄膜组织和性能的影响OA北大核心CSCDCSTPCD
Sputtering Power on the Microstructure and Properties of MgF2 Thin Films Prepared with Magnetron Sputtering
为了减少磁控溅射法沉积MgF2薄膜的F贫乏缺陷,在工作气体Ar2中加入SF6作为反应气体,在石英玻璃衬底上用射频磁控溅射法制备了MgF2薄膜,研究了溅射功率对MgF2薄膜化学成分、微观结构和光学性能的影响.结果表明,随着溅射功率从115 W增加到220 W,F:Mg的原子比不断增加,185 W时达到2.02,最接近理想化学计量比2:1;薄膜的结晶度先提高后降低,最后转变为非晶态;MgF2薄膜的颗粒尺寸先是有所增加,轮廓也变得更加清晰,最后又…查看全部>>
To reduce the F deficiency defect in MgF2 thin films deposited with magnetron sputtering, SF6 was added to the working gas Ar2 as the reactive gas, and MgF2 thin films were prepared on quartz glass substrates with radio frequency (RF) magnetron sputtering. The effects of sputtering power on the chemical compositions, micro-structure and optical properties of MgF2 thin film were investigated. The results show that with sputtering power increase from 115 to 22…查看全部>>
赵长江;马超;刘俊成;刘治钢;陈燕
天津工业大学材料科学与工程学院,天津 300387天津工业大学分离膜材料与膜过程国家重点实验室,天津 300387北京空间飞行器总体设计部,北京 100086天津工业大学材料科学与工程学院,天津 300387天津工业大学分离膜材料与膜过程国家重点实验室,天津 300387
通用工业技术
MgF2薄膜F贫乏透光率减反射溅射功率磁控溅射
MgF2 thin filmF deficiencytransmittanceantireflectionsputtering powermagnetron sputtering
《无机材料学报》 2020 (9)
1064-1070,7
National Natural Science Foundation of China(51352002)
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