红外与毫米波学报2020，Vol.39Issue(5)：533-539,7.DOI:10.11972/j.issn.1001-9014.2020.05.001
基于石墨烯/砷化镓异质结构的毫米波/太赫兹探测器
Graphene/GaAs heterostructure based Millimeter/Terahertz wave photodetector
摘要
Abstract
The low intrinsic absorption and the existence of the inherent defects hamper the monoatomic layer gra-phene from being a high-performance photoelectric material,which leads to the strategy to form heterostructureby combining graphene with semiconductor materials. In this work,a graphene/GaAs heterostructure based photo-detector has been designed and fabricated,in which the two-dimensional electron gas are enhanced to improve the photoresponse ability at the band of sub-millimeter and Terahertz(THz)wave ranging from 20 GHz to 0. 12 THz. Under 25 GHz radiation,the responsivity of photodetector at room temperature(RT)reaches 20. 6 V?W-1, with the response time of 9. 8μs and the noise equivalent power(NEP)of 3. 2×1010 W?Hz-1/2 under a bias of 400 mV. At 0. 12 THz,the responsivity is determined to be 4. 6 V?W-1,with the response time of 10μs. And a NEP of 1. 4×10-9 W?Hz-1/2 can be achieved under the bias of 400 mV. These results exhibit great application potential for the graphene/GaAs heterostructure based THz photodetectors.关键词
砷化镓/HEMT/石墨烯/太赫兹/异质结构Key words
GaAs-based/HEMT/graphene/Terahertz/heterostructure分类
数理科学引用本文复制引用
徐凯琦,徐煌,张家振,吴向东,杨露寒,周洁,林方婷,王林,陈刚..基于石墨烯/砷化镓异质结构的毫米波/太赫兹探测器[J].红外与毫米波学报,2020,39(5):533-539,7.基金项目
Supported by National Natural Science Foundation(61474130)and Shanghai Natural Science Foundation(19ZR1465400,18590780100,19590711600) （61474130）
