半导体学报（英文版）2020，Vol.41Issue(10)：17-20,4.DOI:10.1088/1674-4926/41/10/102101
Study of electrophysical properties of metal-semiconductor contact by the theory of complex systems
Study of electrophysical properties of metal-semiconductor contact by the theory of complex systems
Sh.G.Askerov 1L.K.Abdullayevat 1M.G.Hasanov1
作者信息
- 1. Institute for Physical Problems, Baku State University, AZ1148, Baku, Azerbaijan
- 折叠
摘要
关键词
Schottky diode/metal-semiconductor contact/current-voltage characteristics/interfaces/heterogeneity/complex systemsKey words
Schottky diode/metal-semiconductor contact/current-voltage characteristics/interfaces/heterogeneity/complex systems引用本文复制引用
Sh.G.Askerov,L.K.Abdullayevat,M.G.Hasanov..Study of electrophysical properties of metal-semiconductor contact by the theory of complex systems[J].半导体学报（英文版）,2020,41(10):17-20,4.
