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Effect of microstructure of Au80Sn20 solder on the thermal resistance TO56 packaged GaN-based laser diodes

Hao Lin Deyao Li Liqun Zhang Pengyan Wen Shuming Zhang Jianping Liu Hui Yang

半导体学报（英文版）2020，Vol.41Issue(10)：29-32,4.

半导体学报（英文版）2020，Vol.41Issue(10)：29-32,4.DOI:10.1088/1674-4926/41/10/102104

Effect of microstructure of Au80Sn20 solder on the thermal resistance TO56 packaged GaN-based laser diodes

Hao Lin ¹Deyao Li ²Liqun Zhang ²Pengyan Wen ²Shuming Zhang ²Jianping Liu ²Hui Yang²

作者信息

1. School of Materials Science and Engineering, Shanghai University, Shanghai 201900, China
2. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
折叠

摘要

关键词

Au80Sn20/laser diodes package/thermal resistance

Key words

Au80Sn20/laser diodes package/thermal resistance

引用本文复制引用

Hao Lin,Deyao Li,Liqun Zhang,Pengyan Wen,Shuming Zhang,Jianping Liu,Hui Yang..Effect of microstructure of Au80Sn20 solder on the thermal resistance TO56 packaged GaN-based laser diodes[J].半导体学报（英文版）,2020,41(10):29-32,4.

基金项目

This work was supported by the National Key Research and Development Program of China (Grant Nos.2016YFB0401803,2017YFE0131500,2017YFB0405000),National Natural Science Foundation of China (Grant Nos.61834008,61574160,61804164,and 61704184),Natural Science Foundation of Jiangsu province (BK20180254),China Postdoctoral Science Foundation (2018M630619). （Grant Nos.2016YFB0401803,2017YFE0131500,2017YFB0405000）

半导体学报（英文版）

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ISSN：1674-4926

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