无机材料学报2020，Vol.35Issue(10)：1177-1182,6.DOI:10.15541/jim20190615
铜基底预处理对CVD法生长石墨烯薄膜的影响
Effect of Copper Pretreatment on Growth of Graphene Films by Chemical Vapor Deposition
孙付通 1冯爱虎 2陈兵兵 2于云 2杨红2
作者信息
- 1. 上海师范大学 化学与材料科学学院, 上海 200234
- 2. 中国科学院 上海硅酸盐研究所, 中国科学院特种无机涂层重点实验室, 上海 201899
- 折叠
摘要
Abstract
Chemical vapor deposition (CVD) is an effective method for preparing large-size and high-quality gra-phene materials. The properties of the metal catalysts are direcly related to the quality of the prepared graphene films, so the surface pretreatment of the metal catalysts is required. In this study, the effects of different pretreatment methods on copper substrates are investigated, and the combination of passivation paste pickling and electrochemical polishing is proposed to be an effective method to modify the surface morphology of copper catalyst. The electrochemical pol-ishing parameters (such as voltage, time) and the copper substrate annealing parameters (such as annealing tempera-ture, time) are systematically studied. This study demonstrates that high electrochemical polishing voltage and long polishing time easily lead to the excessive polishing. It is appropriate to set the polishing voltage and polishing time to 8 V and 8 min, respectively. It is found that the annealing temperature and time have significant effects on the grain size of the copper catalyst. After annealing at 1000 ℃ for 30 min, the grain is larger and more uniform. In addition, the structure characterization of graphene prepared by CVD is also performed. According to the SEM image and Ra-man spectrum, the few-layer, high-quality graphene film is successfully prepared.关键词
铜基底/预处理/化学气相沉积法/石墨烯Key words
copper substrate/pretreatment/chemical vapor deposition/graphene分类
化学化工引用本文复制引用
孙付通,冯爱虎,陈兵兵,于云,杨红..铜基底预处理对CVD法生长石墨烯薄膜的影响[J].无机材料学报,2020,35(10):1177-1182,6.
