纳微快报（英文）2021，Vol.13Issue(2)：221-231,11.
Ta-Doped Sb2Te Allows Ultrafast Phase-Change Memory with Excellent High-Temperature Operation Characteristics
Ta?Doped Sb2Te Allows Ultrafast Phase?Change Memory with Excellent High?Temperature Operation Characteristics
Yuan Xue 1Shuai Yan 1Shilong Lv 1Sannian Song 1Zhitang Song1
作者信息
- 1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- 折叠
摘要
Abstract
Phase-change memory (PCM) has considerable promise for new applications based on von Neumann and emerging neuro-morphic computing systems. However, a key challenge in harnessing the advantages of PCM devices is achieving high-speed operation of these devices at elevated temperatures, which is critical for the effi-cient processing and reliable storage of data at full capacity. Herein, we report a novel PCM device based on Ta-doped antimony telluride (Sb2Te), which exhibits both high-speed characteristics and excellent high-temperature characteristics, with an operation speed of 2 ns, endurance of > 106 cycles, and reversible switching at 140 ℃. The high coordination number of Ta and the strong bonds between Ta and Sb/Te atoms contribute to the robustness of the amorphous structure, which improves the thermal stability. Furthermore, the small grains in the three-dimensional limit lead to an increased energy efficiency anda reduced risk of layer segregation, reducing the power consumption and improving the long-term endurance. Our findings for this new Ta–Sb2Te material system can facilitate the development of PCMs with improved performance and novel applications.关键词
Phase-change memory/High speed/Ta/High-temperature operationKey words
Phase-change memory/High speed/Ta/High-temperature operation引用本文复制引用
Yuan Xue,Shuai Yan,Shilong Lv,Sannian Song,Zhitang Song..Ta-Doped Sb2Te Allows Ultrafast Phase-Change Memory with Excellent High-Temperature Operation Characteristics[J].纳微快报（英文）,2021,13(2):221-231,11.
