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电化学蚀刻钽箔制备高容量薄膜钽电解电容器

郭永富 王日明 于淑会 初宝进 孙蓉

集成技术2021,Vol.10Issue(1):35-46,12.
集成技术2021,Vol.10Issue(1):35-46,12.DOI:10.12146/j.issn.2095-3135.20201119001

电化学蚀刻钽箔制备高容量薄膜钽电解电容器

High-Capacitance Thin Film Tantalum Electrolytic Capacitor Fabricated from Electrochemically Etched Tantalum Foils

郭永富 1王日明 2于淑会 3初宝进 1孙蓉2

作者信息

  • 1. 深圳先进电子材料国际创新研究院 深圳 518103
  • 2. 中国科学院深圳先进技术研究院 深圳 518055
  • 3. 中国科学技术大学纳米科学技术学院 苏州 215123
  • 折叠

摘要

Abstract

The use of Tantalum (Ta) electrolytic capacitors as embedded components constitutes a promising strategy to extend the application of embedded capacitors, because Ta electrolytic capacitor can provide both high capacitance and excellent stability. However, the huge thickness of conventional Ta electrolytic capacitor makes it hard to be embedded in a printed circuit board or substrate. In this work, we propose to employ the electrochemical etching of thin Ta foils to fabricate the anode of Ta electrolytic capacitors for embedded application. The specific capacitance of electrochemically etched Ta anode reaches as high as 74 nF/mm2 when measured in 0.1 mol/L H2SO4. The etched Ta anode is then fabricated into electrolytic capacitors, and a stable capacitance of >30 nF/mm2 is demonstrated in the frequency range from 100 Hz to 1 MHz and a low leakage current of 2.7×10-6 A for a duration of 1200 seconds at a direct voltage (DC) of 10 V. The whole thickness of the capacitor is decreased to~75 μm.

关键词

埋入式电容/钽电解电容器/电化学蚀刻/高容量

Key words

embedded capacitor/Tantalum electrolytic capacitor/electrochemical etching/high capacitance

分类

信息技术与安全科学

引用本文复制引用

郭永富,王日明,于淑会,初宝进,孙蓉..电化学蚀刻钽箔制备高容量薄膜钽电解电容器[J].集成技术,2021,10(1):35-46,12.

基金项目

国家重点研发计划项目(2017YFB0406300) This work is supported by the National Key R & D Project from Minister of Science and Technology of China (2017YFB0406300) (2017YFB0406300)

集成技术

2095-3135

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