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首页|期刊导航|半导体学报(英文版)|Preface to the Special Issue on Beyond Moore:Resistive Switching Devices for Emerging Memory and Neuromorphic Computing

Preface to the Special Issue on Beyond Moore:Resistive Switching Devices for Emerging Memory and Neuromorphic Computing

Yue Hao Huaqiang Wu Yuchao Yang Qi Liu Xiao Gong Genquan Han Ming Li

半导体学报(英文版)2021,Vol.42Issue(1):25-26,2.
半导体学报(英文版)2021,Vol.42Issue(1):25-26,2.DOI:10.1088/1674-4926/42/1/010101

Preface to the Special Issue on Beyond Moore:Resistive Switching Devices for Emerging Memory and Neuromorphic Computing

Preface to the Special Issue on Beyond Moore:Resistive Switching Devices for Emerging Memory and Neuromorphic Computing

Yue Hao 1Huaqiang Wu 2Yuchao Yang 3Qi Liu 4Xiao Gong 5Genquan Han 1Ming Li6

作者信息

  • 1. School of Microelectronics, Xidian University, Xi'an 710071, China
  • 2. Institute of Microelectronics, Tsinghua University, Beijing 100084, China
  • 3. Department of Micro/nanoelectronics, Peking University, Beijing 100871, China
  • 4. Frontier Institute of Chip and System, Fudan University, Shanghai 200438, China
  • 5. Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117546, Singapore
  • 6. Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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Yue Hao,Huaqiang Wu,Yuchao Yang,Qi Liu,Xiao Gong,Genquan Han,Ming Li..Preface to the Special Issue on Beyond Moore:Resistive Switching Devices for Emerging Memory and Neuromorphic Computing[J].半导体学报(英文版),2021,42(1):25-26,2.

半导体学报(英文版)

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1674-4926

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