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Towards engineering in memristors for emerging memory and neuromorphic computing:A review

Andrey S. Sokolov Haider Abbas Yawar Abbas Changhwan Choi

半导体学报（英文版）2021，Vol.42Issue(1)：27-55,29.

半导体学报（英文版）2021，Vol.42Issue(1)：27-55,29.DOI:10.1088/1674-4926/42/1/013101

Towards engineering in memristors for emerging memory and neuromorphic computing:A review

Andrey S. Sokolov ¹Haider Abbas ¹Yawar Abbas ²Changhwan Choi¹

作者信息

1. Division of Materials Science and Engineering, Hanyang University, Seoul 04763, Republic of Korea
2. Department of Physics, Khalifa University, Abu Dhabi 127788, United Arab Emirates
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摘要

关键词

RRAM/memristor/emerging memories/neuromorphic computing/electronic synapse/resistive switching/memristor engineering

Key words

RRAM/memristor/emerging memories/neuromorphic computing/electronic synapse/resistive switching/memristor engineering

引用本文复制引用

Andrey S. Sokolov,Haider Abbas,Yawar Abbas,Changhwan Choi..Towards engineering in memristors for emerging memory and neuromorphic computing:A review[J].半导体学报（英文版）,2021,42(1):27-55,29.

基金项目

This research was supported by Basic Science Research Program through the National Research Foundation of Korea(NRF),funded by the Ministry of Education(NRF-2019R1F1A1057243),together with the Future Semiconduct-or Device Technology Development Program(20003808,10080689,20004399),funded by MOTIE(Ministry of Trade,In-dustry & Energy)and KSRC(Korea Semiconductor Research Consortium). （NRF）

半导体学报（英文版）

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ISSN：1674-4926

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