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A review of in situ transmission electron microscopy study on the switching mechanism and packaging reliability in non-volatile memory

Xin Yang Junhao Chu Chen Luo Xiyue Tian Fang Liang Yin Xia Xinqian Chen Chaolun Wang Steve Xin Liang Xing Wu

半导体学报（英文版）2021，Vol.42Issue(1)：57-71,15.

半导体学报（英文版）2021，Vol.42Issue(1)：57-71,15.DOI:10.1088/1674-4926/42/1/013102

A review of in situ transmission electron microscopy study on the switching mechanism and packaging reliability in non-volatile memory

Xin Yang ¹Junhao Chu ¹Chen Luo ¹Xiyue Tian ¹Fang Liang ¹Yin Xia ¹Xinqian Chen ¹Chaolun Wang ¹Steve Xin Liang ²Xing Wu¹

作者信息

1. Shanghai Key Laboratory of Multidimensional Information Processing, East China Normal University, Shanghai 200241, China
2. Changjiang Electronics Integrated Circuit (Shaoxing) Co., Ltd, Shaoxing 312000, China
折叠

摘要

关键词

memory/transmission electron microscopy/in situ characterization/package/reliability

Key words

memory/transmission electron microscopy/in situ characterization/package/reliability

引用本文复制引用

Xin Yang,Junhao Chu,Chen Luo,Xiyue Tian,Fang Liang,Yin Xia,Xinqian Chen,Chaolun Wang,Steve Xin Liang,Xing Wu..A review of in situ transmission electron microscopy study on the switching mechanism and packaging reliability in non-volatile memory[J].半导体学报（英文版）,2021,42(1):57-71,15.

基金项目

This work is supported by the Projects of Science and Technology Commission of Shanghai Municipality(19ZR1473800 and 14DZ2260800),the Shanghai Rising-Star Program(17QA1401400),Young Elite Scientists Sponsorship Program by CAST(YESS),and the Fundamental Research Funds for the Central Universities. （19ZR1473800 and 14DZ2260800）

半导体学报（英文版）

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ISSN：1674-4926

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