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Electrolyte-gated transistors for neuromorphic applications

Heyi Huang Chen Ge Zhuohui Liu Hai Zhong Erjia Guo Meng He Can Wang Guozhen Yang Kuijuan Jin

半导体学报（英文版）2021，Vol.42Issue(1)：73-85,13.

半导体学报（英文版）2021，Vol.42Issue(1)：73-85,13.DOI:10.1088/1674-4926/42/1/013103

Electrolyte-gated transistors for neuromorphic applications

Heyi Huang ¹Chen Ge ²Zhuohui Liu ¹Hai Zhong ²Erjia Guo ¹Meng He ²Can Wang ¹Guozhen Yang ¹Kuijuan Jin²

作者信息

1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
2. School of Physical Sciences, University of Chinese Academy of Science, Beijing 100049, China
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摘要

关键词

electrolyte-gated transistors/neuromorphic comupting/artificial synapses

Key words

electrolyte-gated transistors/neuromorphic comupting/artificial synapses

引用本文复制引用

Heyi Huang,Chen Ge,Zhuohui Liu,Hai Zhong,Erjia Guo,Meng He,Can Wang,Guozhen Yang,Kuijuan Jin..Electrolyte-gated transistors for neuromorphic applications[J].半导体学报（英文版）,2021,42(1):73-85,13.

基金项目

This work was supported by the National Key R&D Pro-gram of China(No.2017YFA0303604 and 2019YFA0308500),the Youth Innovation Promotion Association of CAS(No.2018008),the National Natural Science Foundation of China(Nos.12074416,11674385,11404380,11721404,and 11874412),and the Key Research Program of Frontier Sci-ences CAS(No.QYZDJSSW-SLH020). （No.2017YFA0303604 and 2019YFA0308500）

半导体学报（英文版）

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ISSN：1674-4926

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