无机材料学报2021，Vol.36Issue(2)：197-202,6.DOI:10.15541/jim20200126
Fe/Bi0.5Sb1.5Te3热电元件高温稳定性研究
High Temperature Interfacial Stability of Fe/Bi0.5Sb1.5Te3 Thermoelectric Elements
摘要
Abstract
The high temperature interfacial stability of thermoelectric (TE) elements, which is mainly evaluated by the inter-diffusion and interfacial resistivity at the interface between the barrier layer and the TE material, is one of the key factors determining the service performance and application prospects of TE devices. In this study, a screening method based on high-throughput strategy was employed to further improve the interfacial stability of P-type bismuth telluride TE devices, and Fe was proved the preferred barrier layer material for P-type Bi0.5Sb1.5Te3 (P-BT). Then Fe/P-BT TE elements were prepared by one-step sintering. Evolution of the Fe/P-BT interfacial microstructure during high temperature accelerated aging was systematically studied, and stability of the interfacial resistivity was explored. It is found that during aging, the Fe/P-BT interface is well bonded and the composition of the ternary Fe-Sb-Te diffusion layer remains basically unchanged. The diffusion layer thickness increases linearly with the square root of the aging time and the growth activation energy is 199.6 kJ/mol. The initially low interfacial resistivity of the Fe/P-BT interface increases slowly with the prolonged aging time but remains below 10 μ?·cm2 even after 16 d at 350 ℃. The life prediction based on the interfacial diffusion kinetics indicates that Fe is a suitable barrier layer material for Bi0.5Sb1.5Te3 TE elements.关键词
热电元件/碲化铋/阻挡层/界面扩散/界面电阻率Key words
thermoelectric element/bismuth telluride/barrier layer/interfacial diffusion/interfacial resistivity分类
化学化工引用本文复制引用
王旭,顾明,廖锦城,宋庆峰,史迅,柏胜强,陈立东..Fe/Bi0.5Sb1.5Te3热电元件高温稳定性研究[J].无机材料学报,2021,36(2):197-202,6.基金项目
National Key Research and Development Program of China (2018YFB0703604) （2018YFB0703604）
National Natural Science Foundation of China (51632010,51972324) （51632010,51972324）
