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Mobility enhancement techniques for Ge and GeSn MOSFETs

Ran Cheng Zhuo Chen Sicong Yuan Mitsuru Takenaka Shinichi Takagi Genquan Han Rui Zhang

半导体学报（英文版）2021，Vol.42Issue(2)：19-27,9.

半导体学报（英文版）2021，Vol.42Issue(2)：19-27,9.DOI:10.1088/1674-4926/42/2/023101

Mobility enhancement techniques for Ge and GeSn MOSFETs

Ran Cheng ¹Zhuo Chen ¹Sicong Yuan ¹Mitsuru Takenaka ²Shinichi Takagi ²Genquan Han ³Rui Zhang¹

作者信息

1. School of Micro-Nano Electronics,Zhejiang University,Hangzhou 310058,China
2. School of Engineering,Tokyo University,Yayoi 2-11-16,Tokyo 113-8656,Japan
3. State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology,School of Microelectronics,Xidian University,Xi'an 710071,China
折叠

摘要

关键词

germanium/germanium-tin/MOSFET/mobility

Key words

germanium/germanium-tin/MOSFET/mobility

引用本文复制引用

Ran Cheng,Zhuo Chen,Sicong Yuan,Mitsuru Takenaka,Shinichi Takagi,Genquan Han,Rui Zhang..Mobility enhancement techniques for Ge and GeSn MOSFETs[J].半导体学报（英文版）,2021,42(2):19-27,9.

基金项目

This work was supported,in part,by the Zhejiang Provin-cial Natural Science Foundation of China under Grant LR18F040001 and in part by the Fundamental Research Funds for the Central Universities. （）

半导体学报（英文版）

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ISSN：1674-4926

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