首页|期刊导航|半导体学报（英文版）|The past and future of multi-gate field-effect transistors:Process challenges and reliability issues
半导体学报（英文版）2021，Vol.42Issue(2)：28-39,12.DOI:10.1088/1674-4926/42/2/023102
The past and future of multi-gate field-effect transistors:Process challenges and reliability issues
The past and future of multi-gate field-effect transistors:Process challenges and reliability issues
摘要
关键词
Si FinFETs/ballistic transport/high mobility/bias-temperature instability/hot-carrier injection/germaniumKey words
Si FinFETs/ballistic transport/high mobility/bias-temperature instability/hot-carrier injection/germanium引用本文复制引用
Ying Sun,Xiao Yu,Rui Zhang,Bing Chen,Ran Cheng..The past and future of multi-gate field-effect transistors:Process challenges and reliability issues[J].半导体学报（英文版）,2021,42(2):28-39,12.基金项目
The authors would like to express their deep gratitude to Prof.Hanming Wu from the School of Micro-nano Electronics,Zhejiang University for his valuable and inspiring discussion with the authors.This work was supported by Zhejiang Provin-cial Natural Science Foundation of China under Grant LR18F040001,LY19F040001,and the Opening Project of Key Laboratory of Microelectronic Devices & Integrated Techno-logy,Institute of Microelectronics,Chinese Academy of Sci-ences. （）
