半导体学报（英文版）2021，Vol.42Issue(2)：83-102,20.DOI:10.1088/1674-4926/42/2/023106
A review of silicon-based wafer bonding processes,an approach to realize the monolithic integration of Si-CMOS and Ⅲ-Ⅴ-on-Si wafers
A review of silicon-based wafer bonding processes,an approach to realize the monolithic integration of Si-CMOS and Ⅲ-Ⅴ-on-Si wafers
Shuyu Bao 1Eugene Fitzgerald 1Chuan Seng Tan 2Kwang Hong Lee 1Yue Wang 3Khaw Lina 1Li Zhang 1Bing Wang 1Wardhana Aji Sasangka 1Kenneth Eng Kian Lee 1Soo Jin Chua 4Jurgen Michel1
作者信息
- 1. Low Energy Electronic Systems(LEES),Singapore-MIT Alliance for Research and Technology(SMART),Singapore 138602,Singapore
- 2. Department of Materials Science and Engineering,Massachusetts Institute of Technology,Cambridge,MA 02139,USA
- 3. School of Electrical and Electronic Engineering,Nanyang Technological University,Singapore 639798,Singapore
- 4. School of Electronics and Information Technology,Sun Yat-Sen University,Guangzhou 510006,China
- 折叠
摘要
关键词
material/thin film/integrated circuitKey words
material/thin film/integrated circuit引用本文复制引用
Shuyu Bao,Eugene Fitzgerald,Chuan Seng Tan,Kwang Hong Lee,Yue Wang,Khaw Lina,Li Zhang,Bing Wang,Wardhana Aji Sasangka,Kenneth Eng Kian Lee,Soo Jin Chua,Jurgen Michel..A review of silicon-based wafer bonding processes,an approach to realize the monolithic integration of Si-CMOS and Ⅲ-Ⅴ-on-Si wafers[J].半导体学报（英文版）,2021,42(2):83-102,20.
