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Enhancement of refresh time in quasi-nonvolatile memory by the density of states engineering

Zhaowu Tang Chunsen Liu Senfeng Zeng Xiaohe Huang Liwei Liu Jiayi Li Yugang Jiang David Wei Zhang Peng Zhou

半导体学报（英文版）2021，Vol.42Issue(2)：103-108,6.

半导体学报（英文版）2021，Vol.42Issue(2)：103-108,6.DOI:10.1088/1674-4926/42/2/024101

Enhancement of refresh time in quasi-nonvolatile memory by the density of states engineering

Zhaowu Tang ¹Chunsen Liu ¹Senfeng Zeng ²Xiaohe Huang ¹Liwei Liu ¹Jiayi Li ¹Yugang Jiang ¹David Wei Zhang ²Peng Zhou¹

作者信息

1. State Key Laboratory of ASIC and System,School of Microelectronics,Fudan University,Shanghai 200433,China
2. School of Computer Science,Fudan University,Shanghai 200433,China
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摘要

关键词

quasi-nonvolatile memory/refresh time/density of states engineering

Key words

quasi-nonvolatile memory/refresh time/density of states engineering

引用本文复制引用

Zhaowu Tang,Chunsen Liu,Senfeng Zeng,Xiaohe Huang,Liwei Liu,Jiayi Li,Yugang Jiang,David Wei Zhang,Peng Zhou..Enhancement of refresh time in quasi-nonvolatile memory by the density of states engineering[J].半导体学报（英文版）,2021,42(2):103-108,6.

基金项目

This work was supported by the National Natural Sci-ence Foundation of China(61925402,61851402 and 61734003),Science and Technology Commission of Shang-hai Municipality(19JC1416600),National Key Research and De-velopment Program(2017YFB0405600),Shanghai Education Development Foundation and Shanghai Municipal Education Commission Shuguang Program(18SG01),China Postdoctor-al Science Foundation(2019M661358,2019TQ0065). （61925402,61851402 and 61734003）

半导体学报（英文版）

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ISSN：1674-4926

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